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1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

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1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

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Brand Name :	Infineon
Model Number :	FF200R12KT4
Payment Terms :	T/T
Supply Ability :	1000sets
Delivery Time :	25 days after signing the contract

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1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

half-bridge 62mm C-series 1200 V, inverter dual IGBT modules FF200R12KT4 power drive module

Maximum Rated Values

Collector-emitter voltage	Tvj = 25°C	VCES	1200	V
Continuous DC collector current	TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C	IC nom IC	200 320	A A
Repetitive peak collector current	tP = 1 ms	ICRM	400	A
Total power dissipation	TC = 25°C, Tvj max = 175°C	Ptot	1100	W
Gate-emitter peak voltage		VGES	+/-20	V

Characteristic Values

Collector-emitter saturation voltage	IC = 200 A, VGE = 15 V Tvj = 25°C IC = 200 A, VGE = 15 V Tvj = 125°C IC = 200 A, VGE = 15 V Tvj = 150°C	VCE sat		1,75 2,05 2,10	2,15	V VV
Gate threshold voltage	IC = 7,60 mA, VCE = VGE, Tvj = 25°C	VGEth	5,2	5,8	6,4	V
Gate charge	VGE = -15 V ... +15 V	QG		1,80		µC
Internal gate resistor	Tvj = 25°C	RGint		3,8		Ω
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cies		14,0		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cres		0,50		nF
Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C	ICES			5,0	mA
Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C	IGES			400	nA
Turn-on delay time, inductive load	IC = 200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C	td on		0,16 0,17 0,18		µs µs µs
Rise time, inductive load	IC = 200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C	tr		0,045 0,04 0,50		µs µs µs
Turn-off delay time, inductive load	IC = 200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C	td off		0,45 0,52 0,54		µs µs µs
Fall time, inductive load	IC = 200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C	tf		0,10 0,16 0,16		µs µs µs
Turn-on energy loss per pulse	IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, di/dt = 4000 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 2,4 Ω Tvj = 150°C	Eon		10,0 15,0 17,0		19,0 30,0 36,0
Turn-off energy loss per pulse	IC = 200 A, VCE = 600 V, LS = 30 nH Tvj = 25°C VGE = ±15 V, du/dt = 4500 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 2,4 Ω Tvj = 150°C	Eoff		14,0 20,0 23,0		mJ mJ mJ
SC data	VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 150°C	ISC		800		mJ mJ mJ
Thermal resistance, junction to case	IGBT / per IGBT	RthJC			0,135	K/W
Thermal resistance, caseto heatsink	EACH IGBT / per IGBT λPaste = 1 W/(m·K) / λgrease = 1 W/(m·K)	RthCH		0,034		K/W
Temperature under switching conditions		Tvj op	-40		150	°C

Product Tags:

high power igbt module

automotive igbt

1200V Inverter Dual IGBT Half Bridge Module FF200R12KT4 Power Drive 62mm C-Series

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