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Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

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Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

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Brand Name :	Infineon
Model Number :	FF1200R12IE5
Payment Terms :	T/T
Supply Ability :	1000sets
Delivery Time :	25 days after signing the contract

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Product Details
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Infineon Automotive IGBT Module , High Power IGBT Module Converters FF1200R12IE5

Infineon Technologies Automotive IGBT Modules High power converters FF1200R12IE5 Motor drives

Typical Applications
• High power converters
• Motor drives
• UPS systems

Electrical Features
• Extended operating temperature Tvj op
• High short-circuit capability
• Unbeatable robustness
• Tvj op = 175°C
• Trench IGBT 5

Mechanical Features
• Package with CTI>400
• High power density
• High power and thermal cycling capability
• High creepage and clearance distances

IGBT Inverter
Maximum Rated Values

Collector-emitter voltage	Tvj = 25°C	VCES	1200	V
Continuous DC collector current	TC = 80°C, Tvj max = 175°C	IC nom	1200	A
Repetitive peak collector current	tP = 1 ms	ICRM	2400	A
Gate-emitter peak voltage		VGES	+/-20	V

Characteristic Values min. typ. max.

Collector-emitter saturation voltage	IC = 1200 A, VGE = 15 V Tvj = 25°C IC = 1200 A, VGE = 15 V Tvj = 125°C IC = 1200 A, VGE = 15 V Tvj = 175°C	VCE sat		1,70 2,00 2,15	2,15 2,45 2,60	VVV
Gate threshold voltage	IC = 33,0 mA, VCE = VGE, Tvj = 25°C	VGEth	5,25	5,80	6,35	V
Gate charge	VGE = -15 V ... +15 V, VCE = 600V	QG		5,75		µC
Internal gate resistor	Tvj = 25°C	RGint		0,75		Ω
Input capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cies		65,5		nF
Reverse transfer capacitance	f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V	Cres		2,60		nF
Collector-emitter cut-off current	VCE = 1200 V, VGE = 0 V, Tvj = 25°C	ICES			5,0	mA
Gate-emitter leakage current	VCE = 0 V, VGE = 20 V, Tvj = 25°C	IGES			400	nA
Turn-on delay time, inductive load	IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 0,82 Ω Tvj = 175°C	td on		0,20 0,23 0,25		µs µs µs
Rise time,inductive load	IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGon = 0,82 Ω Tvj = 175°C	tr		0,16 0,17 0,18		µs µs µs
Turn-off delay time, inductive load	IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 0,82 Ω Tvj = 175°C	td off		0,48 0,52 0,55		µs µs µs
Fall time,inductive load	IC = 1200 A, VCE = 600 V Tvj = 25°C VGE = ±15 V Tvj = 125°C RGoff = 0,82 Ω Tvj = 175°C	tf		0,08 0,11 0,13		µs µs µs
Turn-on energy loss per pulse	IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, di/dt = 6000 A/µs (Tvj = 175°C) Tvj = 125°C RGon = 0,82 Ω Tvj = 175°C	Eon		80,0 120 160		mJ mJ mJ
Turn-off energy loss per pulse	IC = 1200 A, VCE = 600 V, LS = 45 nH Tvj = 25°C VGE = ±15 V, du/dt = 2800 V/µs (Tvj = 175°C) Tvj = 125°C RGoff = 0,82 Ω Tvj = 175°C	Eoff		130 160 180		mJ mJ mJ
SC data	VGE ≤ 15 V, VCC = 900 V VCEmax = VCES -LsCE ·di/dt tP ≤ 10 µs, Tvj = 175°C	ISC		4000		A
Thermal resistance, junction to case	IGBT/per IGBT	RthJC			28,7	K/kW
Thermal resistance,case to heat sink	IGBT/per IGBT λPaste=1W/(m·K)/λgrease=1W/(m·K)	RthCH		22,1		K/kW
Temperature under switching conditions		Tvj op	-40		175	°C

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